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Theory of neutral divacancy in SiC: a defect for spintronics
Department of Atomic Physics, Budapest Univ. of Technol./Economics, Budafoki út 8, H-1111 Budapest, Hungary.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2010 (English)In: Materials Science Forum, Vols. 645-648, Trans Tech Publications , 2010, 395-397 p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
Trans Tech Publications , 2010. 395-397 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-62704OAI: oai:DiVA.org:liu-62704DiVA: diva2:374054
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ICSCRM 2009
Available from: 2010-12-02 Created: 2010-12-02 Last updated: 2012-04-03

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Gali, AdamGällström, AndreasSon, Nguyen TienJanzén, Erik

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CiteExportLink to record
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