Exciton and defect photoluminescence from SiC
2003 (English)In: Silicon carbide and related materials 2002: ECSCRM 2002 proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden / [ed] Zhe Chuan Feng, Jian H. Zhao, 2003, 81-120 p.Chapter in book (Other academic)
Wide-bandgap semiconductors such as SiC, III-V nitrides and related compounds are attracting rapidly increasing attention due to their other, very interesting, physical properties which are often superior in many ways to those of conventional semiconductors. Steady improvements in crystal quality, and improved knowledge concerning their physical properties, are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue-light emitters. This book comprises the proceedings of the fourth European Conference on Silicon Carbide and Related Materials, held on the 1 to 5 September 2002 in Link3œping, Sweden. This conference series continued its tradition of being the main forum for presenting results, and discussing progress, among university and industry researchers who are active in the fields of SiC and related materials. These proceedings therefore document the latest experimental and theoretical understanding of the growth of bulk and epitaxial layers, the properties of the resultant material, the development of suitable processes and of electronic devices that can exploit and benefit best from the outstanding physical properties offered by wide-bandgap materials
Place, publisher, year, edition, pages
2003. 81-120 p.
, Materials science forum,, ISSN 0255-5476 ; 433/436
IdentifiersURN: urn:nbn:se:liu:diva-62766ISBN: 0-87849-920-2ISBN: 978-0-8784-9920-5OAI: oai:DiVA.org:liu-62766DiVA: diva2:374221