Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
2010 (English)In: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, ISSN 1862-6254, Vol. 4, no 11, 311-313 p.Article in journal (Refereed) Published
We report on the hot-wall MOCVD growth of Mg-doped AlxGa1-xN layers with an Al content as high as x similar to 0.85. After subjecting the layers to post-growth in-situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 k Omega cm was obtained indicating an enhanced p-type conductivity compared to published data for AlxGa1-xN layers with a lower Al content of x similar to 0.70 and a room temperature resistivity of about 10 k Omega cm. It is believed that the enhanced p-type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot-wall MOCVD system.
Place, publisher, year, edition, pages
John Wiley and Sons, Ltd , 2010. Vol. 4, no 11, 311-313 p.
MOCVD, epitaxy, high-Al-content AlGaN, p-type semiconductors, electrical properties
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-62728DOI: 10.1002/pssr.201004290ISI: 000284206700005OAI: oai:DiVA.org:liu-62728DiVA: diva2:374245