Radiation-induced defects in GaN
2010 (English)In: Physica Scripta, Vol. T141, IOP Publishing , 2010, 014015- p.Conference paper (Refereed)
Radiation-induced defects in n-type GaN irradiated by 2 MeV electrons at room temperature were studied by electron paramagnetic resonance (EPR). Four EPR spectra, labelled D1-D4, were observed in irradiated n-type GaN. The D1 spectrum is a broad line (similar to 10-12 mT in line width) with an isotropic g-value g similar to 2.03 and can be detected in all the studied samples in the temperature range of 4-300 K. The D2 centre has an electron spin S = 1/2 and shows a clear hyperfine structure due to interaction with three equivalent N-14. The g-values of the axial configuration are determined to be g(parallel to) = 2.001 and g(perpendicular to) = 1.999. On the basis of the observed hyperfine structure, formation conditions and annealing behaviour, the D2 defect was assigned to the gallium vacancy-oxygen pair in the negative charge state, (VGaON)(-).
Place, publisher, year, edition, pages
IOP Publishing , 2010. 014015- p.
, PHYSICA SCRIPTA, ISSN 0031-8949
IdentifiersURN: urn:nbn:se:liu:diva-62774DOI: 10.1088/0031-8949/2010/T141/014015ISI: 000284694500016OAI: oai:DiVA.org:liu-62774DiVA: diva2:374360