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Radiation-induced defects in GaN
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Japan Atomic Energy Agency.
Japan Atomic Energy Agency.
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2010 (English)In: Physica Scripta, Vol. T141, IOP Publishing , 2010, 014015- p.Conference paper, Published paper (Refereed)
Abstract [en]

Radiation-induced defects in n-type GaN irradiated by 2 MeV electrons at room temperature were studied by electron paramagnetic resonance (EPR). Four EPR spectra, labelled D1-D4, were observed in irradiated n-type GaN. The D1 spectrum is a broad line (similar to 10-12 mT in line width) with an isotropic g-value g similar to 2.03 and can be detected in all the studied samples in the temperature range of 4-300 K. The D2 centre has an electron spin S = 1/2 and shows a clear hyperfine structure due to interaction with three equivalent N-14. The g-values of the axial configuration are determined to be g(parallel to) = 2.001 and g(perpendicular to) = 1.999. On the basis of the observed hyperfine structure, formation conditions and annealing behaviour, the D2 defect was assigned to the gallium vacancy-oxygen pair in the negative charge state, (VGaON)(-).

Place, publisher, year, edition, pages
IOP Publishing , 2010. 014015- p.
Series
PHYSICA SCRIPTA, ISSN 0031-8949
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-62774DOI: 10.1088/0031-8949/2010/T141/014015ISI: 000284694500016OAI: oai:DiVA.org:liu-62774DiVA: diva2:374360
Conference
NMR 2009
Available from: 2010-12-03 Created: 2010-12-03 Last updated: 2015-09-22

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Son, Nguyen TienHemmingsson, CarlPaskova, TanjaMonemar, BoJanzén, Erik

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