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The EI4 EPR centre in 6H SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Tsukuba.
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2010 (English)In: Physica Scripta, Vol. T141, IOP Publishing , 2010, 014013- p.Conference paper, Published paper (Refereed)
Abstract [en]

We present the results of our recent electron paramagnetic resonance (EPR) studies of the EI4 EPR centre in electron-irradiated high-purity semi-insulating 6H SiC. Higher signal intensities and better resolution compared with previous studies have enabled a more detailed study of the hyperfine (hf) structure. Based on the observed hf structure due to the interaction with Si and C neighbours, the effective spin S = 1, the C-1h-symmetry and the annealing behaviour, we suggest a carbon vacancy-carbon antisite complex in the neutral charge state, VCVCCSi0, with the vacancies and the antisite in the basal plane, as a new defect model for the centre.

Place, publisher, year, edition, pages
IOP Publishing , 2010. 014013- p.
Series
Physica Scripta, ISSN 0031-8949
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-62776DOI: 10.1088/0031-8949/2010/T141/014013ISI: 000284694500014OAI: oai:DiVA.org:liu-62776DiVA: diva2:374364
Conference
NMR 2009
Available from: 2010-12-03 Created: 2010-12-03 Last updated: 2011-01-19

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Carlsson, PatrickSon, Nguyen TienMagnusson, BjörnJanzén, Erik

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