The EI4 EPR centre in 6H SiC
2010 (English)In: Physica Scripta, Vol. T141, IOP Publishing , 2010, 014013- p.Conference paper (Refereed)
We present the results of our recent electron paramagnetic resonance (EPR) studies of the EI4 EPR centre in electron-irradiated high-purity semi-insulating 6H SiC. Higher signal intensities and better resolution compared with previous studies have enabled a more detailed study of the hyperfine (hf) structure. Based on the observed hf structure due to the interaction with Si and C neighbours, the effective spin S = 1, the C-1h-symmetry and the annealing behaviour, we suggest a carbon vacancy-carbon antisite complex in the neutral charge state, VCVCCSi0, with the vacancies and the antisite in the basal plane, as a new defect model for the centre.
Place, publisher, year, edition, pages
IOP Publishing , 2010. 014013- p.
, Physica Scripta, ISSN 0031-8949
IdentifiersURN: urn:nbn:se:liu:diva-62776DOI: 10.1088/0031-8949/2010/T141/014013ISI: 000284694500014OAI: oai:DiVA.org:liu-62776DiVA: diva2:374364