Defects in low-energy electron-irradiated n-type 4H-SiC
2010 (English)In: Physica Scripta, vol. T141, IOP Publishing , 2010, 014006- p.Conference paper (Refereed)
The bistable M-center, previously observed in high-energy proton-implanted 4H-SiC, was detected in low-energy electron-irradiated 4H-SiC using deep-level transient spectroscopy (DLTS). Irradiation increased the DLTS signals of the intrinsic defects Z(1/2) and EH6/7 and introduced the frequently observed defects EH1 and EH3. After the M-center is annealed out at about 650K without bias and at about 575K with bias applied to the sample during the annealing process, a new bistable defect in the low temperature range of the DLTS spectrum, the EB-center, evolves. Since low-energy irradiation affects mainly the carbon atoms in SiC, the M-center and the newly discovered EB-center are most probably carbon-related intrinsic defects.
Place, publisher, year, edition, pages
IOP Publishing , 2010. 014006- p.
, Physica Scripta, ISSN 0031-8949
IdentifiersURN: urn:nbn:se:liu:diva-62777DOI: 10.1088/0031-8949/2010/T141/014006ISI: 000284694500007OAI: oai:DiVA.org:liu-62777DiVA: diva2:374366