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EPR and ENDOR Studies of Shallow Donors in SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Tsukuba.
University of Tsukuba.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2010 (English)In: Applied Magnetic Resonance, ISSN 0937-9347, E-ISSN 1613-7507, Vol. 39, no 1-2, 49-85 p.Article in journal (Refereed) Published
Abstract [en]

Recent progress in the investigation of the electronic structure of the shallow nitrogen (N) and phosphorus (P) donors in 3C–, 4H– and 6H–SiC is reviewed with focus on the applications of magnetic resonance including electron paramagnetic resonance (EPR) and other pulsed methods such as electron spin echo, pulsed electron nuclear double resonance (ENDOR), electron spin-echo envelope modulation and two-dimensional EPR. EPR and ENDOR studies of the 29Si and 13C hyperfine interactions of the shallow N donors and their spin localization in the lattice are discussed. The use of high-frequency EPR in combination with other pulsed magnetic resonance techniques for identification of low-temperature P-related centers in P-doped 3C–, 4H– and 6H–SiC and for determination of the valley–orbit splitting of the shallow N and P donors are presented and discussed.

Place, publisher, year, edition, pages
Elsevier B.V , 2010. Vol. 39, no 1-2, 49-85 p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-62783DOI: 10.1007/s00723-010-0134-zOAI: oai:DiVA.org:liu-62783DiVA: diva2:374408
Available from: 2010-12-03 Created: 2010-12-03 Last updated: 2017-12-12

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Son, Nguyen TienIvanov, Ivan GueorguievHenry, AnneJanzén, Erik

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