liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Epitaxial growth of AlN layers on SiC substrates in a hot-wall MOCVD system
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Show others and affiliations
2002 (English)In: Phys. Stat. Sol. (c), Vol. 0, Issue 1, 2002, Vol. n 1, 205-208 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this study we report the successful growth of AlN and AlN/GaN on SiC substrates in a MOCVD process based on a hot-wall susceptor design. Different features of AlN growth are established depending on the total reactor pressure, temperature, off-cut SiC substrate orientation and V-to-III gas-flow ratio. The feasibility of the hot-wall MOCVD concept is demonstrated by the performance of AlN/GaN structures with state-of-the-art properties with strong potential for further optimization. A narrower X-ray rocking curve over the asymmetric 10.4 than the symmetric 00.2 reflection clearly underlines the high overall crystal quality of the GaN layers on AlN buffers grown in this type of MOCVD reactor.

Place, publisher, year, edition, pages
2002. Vol. n 1, 205-208 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-62810DOI: 10.1002/pssc.200390024OAI: oai:DiVA.org:liu-62810DiVA: diva2:374593
Conference
International Workshop on Nitride Semiconductors
Available from: 2010-12-06 Created: 2010-12-06 Last updated: 2016-08-31

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Kakanakova-Georgieva, AneliaForsberg, UrbanBirch, JensHultman, LarsJanzén, Erik

Search in DiVA

By author/editor
Kakanakova-Georgieva, AneliaForsberg, UrbanBirch, JensHultman, LarsJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and BiologyThin Film Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 215 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf