FeSi2 thin films investigated by X-ray photoelectron and infrared spectroscopy
2000 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 58, no 2-3, 420-427 p.Article in journal (Refereed) Published
Thin films of iron silicide prepared by ion-beam and by electron-beam evaporation of iron on silicon substrates and following rapid thermal processing are investigated. Low-energy argon ion sputtering of surface layer is used for depth profile XPS analysis. The Si2p, Fe2p3/2, O1s and C1s electron spectra are recorded. On the basis of established binding energies and infrared transmission spectra (200–600 cm−1) conclusion are made about the effect of the annealing temperature and duration on the chemical bond type and phase composition of the iron silicide films.
Place, publisher, year, edition, pages
2000. Vol. 58, no 2-3, 420-427 p.
Thin films; Iron disilicide; XPS
IdentifiersURN: urn:nbn:se:liu:diva-62857DOI: 10.1016/S0042-207X(00)00200-1OAI: oai:DiVA.org:liu-62857DiVA: diva2:374889