Growth of 6H and 4H-SiC by sublimation epitaxy
1999 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 197, no 1-2, 155-162 p.Article in journal (Refereed) Published
The epitaxial sublimation growth process of SiC has been investigated. Layers with specular surfaces and growth rates up to 2 mm/h have been obtained. No step bunching is observed by optical microscopy even on very thick layers which indicates a stable step growth mechanism. Under certain growth conditions the morphology degrades. The morphological stability is investigated and discussed in relation to the growth kinetics. Impurities in the epitaxial layers are investigated by secondary ion mass spectroscopy and low-temperature photoluminescence. The carrier concentration is measured by capacitance–voltage measurements. The structural quality of the grown material is improved compared to the substrate as shown by X-ray diffraction measurements.
Place, publisher, year, edition, pages
1999. Vol. 197, no 1-2, 155-162 p.
SiC; Morphology; Growth rate; Purity
IdentifiersURN: urn:nbn:se:liu:diva-62862DOI: 10.1016/S0022-0248(98)00890-2OAI: oai:DiVA.org:liu-62862DiVA: diva2:374898