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Growth of 6H and 4H-SiC by sublimation epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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1999 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 197, no 1-2, 155-162 p.Article in journal (Refereed) Published
Abstract [en]

  The epitaxial sublimation growth process of SiC has been investigated. Layers with specular surfaces and growth rates up to 2 mm/h have been obtained. No step bunching is observed by optical microscopy even on very thick layers which indicates a stable step growth mechanism. Under certain growth conditions the morphology degrades. The morphological stability is investigated and discussed in relation to the growth kinetics. Impurities in the epitaxial layers are investigated by secondary ion mass spectroscopy and low-temperature photoluminescence. The carrier concentration is measured by capacitance–voltage measurements. The structural quality of the grown material is improved compared to the substrate as shown by X-ray diffraction measurements.

 

Place, publisher, year, edition, pages
1999. Vol. 197, no 1-2, 155-162 p.
Keyword [en]
SiC; Morphology; Growth rate; Purity
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-62862DOI: 10.1016/S0022-0248(98)00890-2OAI: oai:DiVA.org:liu-62862DiVA: diva2:374898
Available from: 2010-12-06 Created: 2010-12-06 Last updated: 2017-12-11

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Syväjärvi, MikaelYakimova, RositsaKakanakova-Georgieva, AneliaHenry, AnneWahab, Qamar UlJanzén, Erik

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Syväjärvi, MikaelYakimova, RositsaKakanakova-Georgieva, AneliaHenry, AnneWahab, Qamar UlJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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Journal of Crystal Growth
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