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Depth dependence of photoluminescence and chemical bonding in porous silicon
Bulgarian Academy of Sciences, Sofia.
Bulgarian Academy of Sciences, Sofia.
Bulgarian Academy of Sciences, Sofia.
Bulgarian Academy of Sciences, Sofia.
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1999 (English)In: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 80, no 1-4, 179-182 p.Article in journal (Refereed) Published
Abstract [en]

Porous silicon (PS) is studied by stepwise peeling of the surface layer to clarify the non-uniformity in the photoluminescence (PL) and correlate it with the in-depth chemical bonding and structure of the 30 μm thick layer. The PL intensity grows by an order of magnitude after the peeling off of the first 10 μm and decreases five times in the next 5 μm while the peak maximum position shifts from 730 to 800 nm. X-ray photoelectron spectroscopy (XPS) measurements show that Si–Si and Si–O bonds are present both on the surface and below, and the preferential oxidation state of silicon changes from 3+ and 4+ on the surface to 1+ and 2+ below 10 μm. Using Raman spectroscopy silicon nanocrystals are shown to exist. Their mean size can be estimated at about 3 nm. These results show that the strongest PL comes from a region in the PS layer where silicon nanocrystallites are surrounded by oxides with a low level of oxidation and not from the strongly oxidized surface layer.

Place, publisher, year, edition, pages
1999. Vol. 80, no 1-4, 179-182 p.
Keyword [en]
Porous silicon; Photoluminescence; Raman spectra; XPS; Chemical bonding; Oxidation states of silicon
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-62863DOI: 10.1016/S0022-2313(98)00092-1OAI: diva2:374903
Available from: 2010-12-06 Created: 2010-12-06 Last updated: 2011-01-13

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Kakanakova-Georgieva, Anelia
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