Microhardness of 6H-SiC epitaxial layers grown by sublimation
1999 (English)In: Crystal research and technology (1981), ISSN 0232-1300, E-ISSN 1521-4079, Vol. 34, no 8, 943-947 p.Article in journal (Refereed) Published
Knoop microhardness of 6H-SiC layers grown by sublimation epitaxy was investigated. The microhardness-load curves for all of the samples were measured and then used to extract the load-independent microhardness values. The relationships of these values to the growth time and growth rate were studied. The microhardness-depth profiles indicated that the layer/substrate interface region had a microhardness value that differed significantly from that of both the epi-layer and the substrate.
Place, publisher, year, edition, pages
1999. Vol. 34, no 8, 943-947 p.
silicon carbide;epitaxial layers;sublimation growth;microhardness
IdentifiersURN: urn:nbn:se:liu:diva-62865DOI: 10.1002/(SICI)1521-4079(199909)34:8<943::AID-CRAT943>3.0.CO;2-OOAI: oai:DiVA.org:liu-62865DiVA: diva2:374905