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Microhardness of 6H-SiC epitaxial layers grown by sublimation
University of Sofia.
University of Sofia.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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1999 (English)In: Crystal research and technology (1981), ISSN 0232-1300, E-ISSN 1521-4079, Vol. 34, no 8, 943-947 p.Article in journal (Refereed) Published
Abstract [en]

Knoop microhardness of 6H-SiC layers grown by sublimation epitaxy was investigated. The microhardness-load curves for all of the samples were measured and then used to extract the load-independent microhardness values. The relationships of these values to the growth time and growth rate were studied. The microhardness-depth profiles indicated that the layer/substrate interface region had a microhardness value that differed significantly from that of both the epi-layer and the substrate.

Place, publisher, year, edition, pages
1999. Vol. 34, no 8, 943-947 p.
Keyword [en]
silicon carbide;epitaxial layers;sublimation growth;microhardness
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-62865DOI: 10.1002/(SICI)1521-4079(199909)34:8<943::AID-CRAT943>3.0.CO;2-OOAI: oai:DiVA.org:liu-62865DiVA: diva2:374905
Available from: 2010-12-06 Created: 2010-12-06 Last updated: 2017-12-11

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Kakanakova-Georgieva, AneliaYakimova, RositsaJanzén, Erik

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Kakanakova-Georgieva, AneliaYakimova, RositsaJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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