Interface chemistry of WN/4H-SiC structures
1999 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 151, no 3-4, 225-232 p.Article in journal (Refereed) Published
The interface chemistry of WN/4H–SiC structures has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS investigations have been performed on as deposited, 800°C and 1200°C annealed (4 min) samples. The as deposited and 800°C annealed samples are characterized by chemically inert interfaces. Complete nitrogen out-diffusion from the WN layer, significant carbon diffusion into the contact layer, tungsten carbide and tungsten silicide formation occur during the 1200°C annealing process. The 800°C annealed WN/4H–SiC contacts are found to be of a Schottky type with a barrier height of 0.91 eV. The Schottky barrier height and the ideality factor show no significant changes during 100 h storage at 500°C under nitrogen and during operation at increasing temperature up to 350°C in air.
Place, publisher, year, edition, pages
1999. Vol. 151, no 3-4, 225-232 p.
Depth profiling; Electrical properties and measurements; Tungsten nitride; Silicon carbide
IdentifiersURN: urn:nbn:se:liu:diva-62866DOI: 10.1016/S0169-4332(99)00277-9OAI: oai:DiVA.org:liu-62866DiVA: diva2:374908