Characterization of ohmic and Schottky contacts on SiC
1999 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 343-344, 637-641 p.Article in journal (Refereed) Published
The interface chemistry of nickel and tungsten based contacts on SiC has been investigated by XPS on as-deposited samples and after contact formation. After annealing at 950 °C for 10 min, Ni/SiC and Ni/Si/SiC ohmic contacts are formed due to the chemical reactions, as a result of which Ni2Si appears. However, Ni/Si (instead of pure Ni) deposition on SiC leads to modification of the diffusion processes and formation of a contact layer free of carbon. After annealing at 1200 °C for 4 min, the WN (W)/SiC systems are characterized by strong interface reactions resulting in W5Si3 and W2C formation in the contact layer. The 800 °C annealed WN/SiC contact is characterized by a chemically inert interface, and is found to be of a Schottky type.
Place, publisher, year, edition, pages
1999. Vol. 343-344, 637-641 p.
Contacts; Depth profiling; Nickel; Silicon carbide; Tungsten; X-ray photoelectron spectroscopy
IdentifiersURN: urn:nbn:se:liu:diva-62867DOI: 10.1016/S0040-6090(98)01668-XOAI: oai:DiVA.org:liu-62867DiVA: diva2:374912