XPS characterization of tungsten based contact layers on 4H-SiC
1999 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 337, no 1-2, 180-183 p.Article in journal (Refereed) Published
Annealed W (WN)/4H–SiC interfaces have been compared on the basis of X-ray photoelectron spectroscopy (XPS) studies. The 1200°C annealed W (WN)/4H–SiC structures are characterized by intense interface reactions leading to tungsten carbide and tungsten silicide formation in the contact layers. The 800°C annealed WN/4H–SiC structure exhibits a chemically inert interface, and the 800°C annealed WN/4H–SiC contact is found to be of a Schottky type with a barrier height of 0.94 eV and an ideality coefficient of 1.09.
Place, publisher, year, edition, pages
1999. Vol. 337, no 1-2, 180-183 p.
X-ray photoelectron spectroscopy; Interface reaction; WN/SiC structure
IdentifiersURN: urn:nbn:se:liu:diva-62868DOI: 10.1016/S0040-6090(98)01199-7OAI: oai:DiVA.org:liu-62868DiVA: diva2:374914