Investigation of domain evolution in sublimation epitaxy of SiC
1998 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 193, no 1-2, 101-108 p.Article in journal (Refereed) Published
High resolution X-ray diffractometry has been applied to study domain misorientation in SiC epi-layers grown by the sublimation epitaxy method. A pronounced effect of the growth conditions on the mosaicity of the epi-layer has been observed. The results are discussed in terms of domain evolution and structural changes during the epi-growth under different growth conditions.
Place, publisher, year, edition, pages
1998. Vol. 193, no 1-2, 101-108 p.
Silicon carbide; Sublimation epitaxy; X-ray diffraction; Domain misorientation
IdentifiersURN: urn:nbn:se:liu:diva-62869DOI: 10.1016/S0022-0248(98)00466-7OAI: oai:DiVA.org:liu-62869DiVA: diva2:374917