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Investigation of domain evolution in sublimation epitaxy of SiC
Outokumpu Semitronic AB, Ekerö.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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1998 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 193, no 1-2, 101-108 p.Article in journal (Refereed) Published
Abstract [en]

High resolution X-ray diffractometry has been applied to study domain misorientation in SiC epi-layers grown by the sublimation epitaxy method. A pronounced effect of the growth conditions on the mosaicity of the epi-layer has been observed. The results are discussed in terms of domain evolution and structural changes during the epi-growth under different growth conditions.

Place, publisher, year, edition, pages
1998. Vol. 193, no 1-2, 101-108 p.
Keyword [en]
Silicon carbide; Sublimation epitaxy; X-ray diffraction; Domain misorientation
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-62869DOI: 10.1016/S0022-0248(98)00466-7OAI: oai:DiVA.org:liu-62869DiVA: diva2:374917
Available from: 2010-12-06 Created: 2010-12-06 Last updated: 2017-12-11

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Yakimova, RositsaKakanakova-Georgieva, AneliaSyväjärvi, MikaelJanzén, Erik

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Yakimova, RositsaKakanakova-Georgieva, AneliaSyväjärvi, MikaelJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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Journal of Crystal Growth
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