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Structural properties of 6H-SiC epilayers grown by two different techniques
Sofia University.
Sofia University.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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1997 (English)In: Materials Science and Engineering B, ISSN 0921-5107, Vol. 46, no 1-3, 345-348 p.Article in journal (Refereed) Published
Abstract [en]

In the present work we investigated the structural properties of 6H-SiC homoepitaxial layers utilizing microhardness and X-ray characterization techniques. The growth was performed by chemical vapour deposition (CVD) and liquid phase epitaxy (LPE) under various growth conditions. The depth Knoop hardness profiles represent decreasing curves due to the indentation size effect. With load increasing the curves saturate reaching microhardness values comparable with the known Vickers ones. At about 0.4 μm beneath the layer surfaces the curves show small plateaus which may be attributed to structural inhomogeneity. This is suggested by X-ray diffraction spectra taken from the same samples, which contain additional peaks besides the typical ones for 6H-SiC.

Place, publisher, year, edition, pages
1997. Vol. 46, no 1-3, 345-348 p.
Keyword [en]
Chemical vapor deposition; Liquid phase epitaxy; 6H-SiC layers
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-62870DOI: 10.1016/S0921-5107(96)01997-6OAI: oai:DiVA.org:liu-62870DiVA: diva2:374921
Available from: 2010-12-06 Created: 2010-12-06 Last updated: 2011-01-13

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Kakanakova-Georgieva, AneliaYakimova, RositsaHallin, ChristerSyväjärvi, MikaelJanzén, Erik

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Kakanakova-Georgieva, AneliaYakimova, RositsaHallin, ChristerSyväjärvi, MikaelJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
Natural Sciences

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