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Improved Ni ohmic contact on n-type 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Research Institute for Technical Physics, Budapest.
Sofia University.
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1997 (English)In: Journal of Electronic Materials, ISSN 0361-5235, Vol. 26, no 3, 119-122 p.Article in journal (Refereed) Published
Abstract [en]

This paper presents the structural, chemical and electronic properties of Al/Ni/ Al-layers evaporated on 4H silicon carbide and then annealed at 1000°C for 5 min. The structure was investigated before and after annealing by transmission electron spectroscopy from cross-sectional specimens. With x-ray photoelectron spectroscopy, both element distribution and bonding energies were followed during sputtering through the alloyed metal-semiconductor contact. Voids are found in both annealed Ni/4H-SiC and Al/Ni/Al/4H-SiC contact layers, though closer to the metal-semiconductor interface in the former case. The first aluminum-layer is believed to prevent voids to be formed at the interface and also to reduce the oxide on the semiconductor surface. The contact was found to be ohmic with a specific contact resistance ρc - 1.8 × 10−5 Ωcm2 which is more than three times lower ρc than for the ordinary Ni/4H-SiC contact prepared in the same way.

Place, publisher, year, edition, pages
1997. Vol. 26, no 3, 119-122 p.
Keyword [en]
Al/Ni/Al/4H-SiC - transmission electron microscopy - x-ray photoelectron spectroscopy
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-62871DOI: 10.1007/s11664-997-0136-2OAI: oai:DiVA.org:liu-62871DiVA: diva2:374924
Available from: 2010-12-06 Created: 2010-12-06 Last updated: 2013-02-06

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Hallin, ChristerYakimova, RositsaKakanakova-Georgieva, AneliaJanzén, Erik

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Hallin, ChristerYakimova, RositsaKakanakova-Georgieva, AneliaJanzén, Erik
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Department of Physics, Chemistry and BiologyThe Institute of TechnologySemiconductor Materials
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