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Switching Peformance for Fabricated and Simulated 4H-SiC High Power Bipolar Transistors
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2003 (English)In: Solid State Electronics, Vol. 47, 2003, 639- p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2003. 639- p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-62878OAI: oai:DiVA.org:liu-62878DiVA: diva2:374959
Conference
International Semiconductor Device Research Symposium 2001
Available from: 2010-12-06 Created: 2010-12-06 Last updated: 2011-01-13

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Forsberg, UrbanJanzén, Erik

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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
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  • Other style
More styles
Language
  • de-DE
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Output format
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