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Deep-Level Defects in Electron-irradiated 4H SiC Epitaxial Layers
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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1997 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 81, no 9, 6155-6159 p.Article in journal (Refereed) Published
Abstract [en]

Deep level defects in electron-irradiated 4H SiC epitaxial layers grown by chemical vapor deposition were studied using deep level transient spectroscopy. The measurements performed on electron-irradiated p+n junctions in the temperature range 100–750 K revealed several electron traps and one hole trap with thermal ionization energies ranging from 0.35 to 1.65 eV. Most of these defects were already observed at a dose of irradiation as low as ≈5×1013 cm-2. Dose dependence and annealing behavior of the defects were investigated. For two of these electron traps, the electron capture cross section was measured. From the temperature dependence studies, the capture cross section of these two defects are shown to be temperature independent. © 1997 American Institute of Physics.

Place, publisher, year, edition, pages
1997. Vol. 81, no 9, 6155-6159 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-62914DOI: 10.1063/1.364397OAI: oai:DiVA.org:liu-62914DiVA: diva2:375097
Available from: 2010-12-07 Created: 2010-12-07 Last updated: 2017-12-11

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Hemmingsson, CarlSon, Nguyen TienKordina, OlleBergman, PederJanzén, Erik

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