liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Growth of SiC by "Hot-Wall" CVD and HTCVD
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Show others and affiliations
1997 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 202, no 1, 321-334 p.Article in journal (Refereed) Published
Abstract [en]

A reactor concept for the growth of high-quality epitaxial SiC films has been investigated. The reactor concept is based on a hot-wall type susceptor which, due to the unique design, is very power efficient. Four different susceptors are discussed in terms of quality and uniformity of the grown material. The films are grown using the silane–propane–hydrogen system on off-axis (0001) 6H- and 4H-SiC substrates. Layers with doping levels in the low 1014 cm—3 showing strong free exciton emission in the photoluminescence spectra may readily be grown reproducibly in this system. The quality of the grown layers is also confirmed by the room temperature minority carrier lifetimes in the microsecond range and the optically detected cyclotron resonance data which give mobilities in excess of 100000 cm2/Vs at 6 K. Finally, a brief description will be given of the HTCVD technique which shows promising results in terms of high quality material grown at high growth rates.

Place, publisher, year, edition, pages
1997. Vol. 202, no 1, 321-334 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-62917DOI: 10.1002/1521-3951(199707)202:1<321::AID-PSSB321>3.0.CO;2-HOAI: oai:DiVA.org:liu-62917DiVA: diva2:375100
Available from: 2010-12-07 Created: 2010-12-07 Last updated: 2017-12-11

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Kordina, OlleHallin, ChristerHenry, AnneBergman, PederIvanov, Ivan GueorguievSon, Nguyen TienJanzén, Erik

Search in DiVA

By author/editor
Kordina, OlleHallin, ChristerHenry, AnneBergman, PederIvanov, Ivan GueorguievSon, Nguyen TienJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
In the same journal
Physica status solidi. B, Basic research
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 122 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf