Growth of SiC by "Hot-Wall" CVD and HTCVD
1997 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 202, no 1, 321-334 p.Article in journal (Refereed) Published
A reactor concept for the growth of high-quality epitaxial SiC films has been investigated. The reactor concept is based on a hot-wall type susceptor which, due to the unique design, is very power efficient. Four different susceptors are discussed in terms of quality and uniformity of the grown material. The films are grown using the silane–propane–hydrogen system on off-axis (0001) 6H- and 4H-SiC substrates. Layers with doping levels in the low 1014 cm—3 showing strong free exciton emission in the photoluminescence spectra may readily be grown reproducibly in this system. The quality of the grown layers is also confirmed by the room temperature minority carrier lifetimes in the microsecond range and the optically detected cyclotron resonance data which give mobilities in excess of 100000 cm2/Vs at 6 K. Finally, a brief description will be given of the HTCVD technique which shows promising results in terms of high quality material grown at high growth rates.
Place, publisher, year, edition, pages
1997. Vol. 202, no 1, 321-334 p.
IdentifiersURN: urn:nbn:se:liu:diva-62917DOI: 10.1002/1521-3951(199707)202:1<321::AID-PSSB321>3.0.CO;2-HOAI: oai:DiVA.org:liu-62917DiVA: diva2:375100