Interface chemistry of a Ti/ Au/ Pt/ Ti/ SiC structure
1997 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 121/122, 208-212 p.Article in journal (Refereed) Published
X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical reactions and diffusion processes at Ti/Au/Pt/Ti/SiC interfaces for as deposited and annealed at 575°C for 10 min structures. The distribution of the elements and the change in their chemical state has been studied. The XP spectra indicate titanium carbide and platinum silicides formation at the SiC interface, which is preceded by the dissociation of SiC due to the reactivity of Ti at 575°C. TiC represents a barrier to the further diffusion of Ti to the SiC bulk and the Ti layer makes the diffusion of Pt into SiC difficult. The element distribution of the annealed structure demonstrates that Pt has diffused through almost the whole gold layer to the surface, an alloy of the two metals being formed.
Place, publisher, year, edition, pages
1997. Vol. 121/122, 208-212 p.
Silicon carbide; Metallization; XPS; Interface reactions; Diffusion processes
IdentifiersURN: urn:nbn:se:liu:diva-62921DOI: 10.1016/S0169-4332(97)00290-0OAI: oai:DiVA.org:liu-62921DiVA: diva2:375123