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Microhardness depth profiles of Si/SiC multi-layered structures prepared by chemical vapor deposition
University of Sofia.
University of Sofia.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2001 (English)In: Bulgarian Journal of Physics, ISSN 1310-0157, Vol. 28, no 3-4, 147-152 p.Article in journal (Refereed) Published
Abstract [en]

Microhardness-dcpth profiles of SilSiC Iayered structures prepared by chemical \'apour deposition are studied by indenting with the pyramids of K1100p and of Vickers. In this way it is possible to reveal strained regions resulting from the large lattice mismatch between Si and SiC,

Place, publisher, year, edition, pages
2001. Vol. 28, no 3-4, 147-152 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-63038OAI: oai:DiVA.org:liu-63038DiVA: diva2:375840
Available from: 2010-12-09 Created: 2010-12-09 Last updated: 2011-01-04

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Yakimova, RositsaJanzén, Erik

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