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Deep-level luminescence at 1.0 eV in 6H SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2001 (English)In: Mat. Res. Soc. Symp. Proc., Vol. 640, 2001Conference paper, Published paper (Refereed)
Abstract [en]

Results from photoluminescence (PL) and Zeeman effect measurements of a PL center, labeled UD-1, in 6H SiC are presented. The spectrum consists of three no phonon-lines (NPLs) at 0.9952, 1.0015 and 1.0020 eV. The luminescence starts decreasing in intensity above 40 K and is completely quenched at 80 K. The observed Zeeman splitting reveals a spin one half of the ground state of the two highest energy lines. No splitting of the 0.9952 eV line is detected. The g-value for the 1.0015 eV and 1.0020 e lines are g = 1:4 and g = 1:7, respectively. For both lines, g = 0. The C3v symmetry indicates that the UD-1 center is either a substitutional defect or a complex with its constituents lying along the c-axis of the lattice.

Place, publisher, year, edition, pages
2001.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-63068DOI: 10.1557/PROC-640-H7.11OAI: oai:DiVA.org:liu-63068DiVA: diva2:376005
Conference
2000 MRS Fall Meeting & Exhibit, 27-30 November 2000, Boston, MA, United States
Available from: 2010-12-09 Created: 2010-12-09 Last updated: 2015-06-17

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Magnusson, BjörnNguyen, Son TienJanzén, Erik

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