liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Influence of gravity on defect formation in homoepitaxial layers of SiC grown by sublimation
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Institut National Polytechnique de Grenoble.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2001 (English)In: ESA SP-454, 2001, 381- p.Conference paper, Published paper (Refereed)
Abstract [en]

4H-SiC homoepitaxial growth has been performed by sublimation process. The basic transport mechanism and dynamics of the growth has been studied. Both, experiment and numerical modelling have been performed. It has been shown that high growth rate (0.1 mm/hour) can be obtained when the overall structural quality is very good and the surface morphology is excellent. However, deep level defects associated with impurities have been observed. Evidence has been obtained that the impurity incorporation may be influenced by gravity-induced growth instabilities. At this stage, numerical modelling of the growth process has been performed considering only macroscopic features. For the present experimental configuration, preliminary results reveal that the influence of microgravity is low. The macroscopic transfer phenomena leading to the growth of the crystal are mainly diffusive. The future is to design specific experiments involving higher temperature difference between source and seed, as well as to consider microscopic growth phenomena.

Place, publisher, year, edition, pages
2001. 381- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-63071OAI: oai:DiVA.org:liu-63071DiVA: diva2:376019
Conference
Microgravity Research & Applications in Physical Sciences & Biotechnology
Available from: 2010-12-09 Created: 2010-12-09 Last updated: 2011-01-03

Open Access in DiVA

No full text

Authority records BETA

Yakimova, RositsaSyväjärvi, MikaelJanzén, Erik

Search in DiVA

By author/editor
Yakimova, RositsaSyväjärvi, MikaelJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of Technology
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 65 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf