Power Schottky rectifiers and microwave transistors in 4H-SiC
2000 (English)In: Proc. of the International Workshop on Semiconductor Devices, 2000, 668-671 p.Conference paper (Refereed)
The physical simulation, fabrication and characterization of 4H-SiC power Schottky diodes and physical simulations of power microwave transistors an presented. A record blocking voltage of 3.85 kV was achieved for a Schottky diode with a 43 μm thick epilayer grown by chimney CVD. For hot-wall CVD grown layers a blocking voltage of 3.6 kV was obtained. Simulations of power MESFETs showed maximum drain currents above 300 mA/mm and a drain breakdown above 150 volt An RF analysis showed the cut-off and the maximum frequency of oscillation for a device with a gate length of 0.5 μm to be 13 and 45 GHz respectively. The maximum achievable gain was above 10 dB ep to 26 GFz.
Place, publisher, year, edition, pages
2000. 668-671 p.
, SPIE - The International Society for Optical Engineering, ISSN 0361-0748 ; 3975
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-63087ISBN: 9780819436016ISBN: 0819436011OAI: oai:DiVA.org:liu-63087DiVA: diva2:376319
10th International Workshop on Semiconductor Devices, 14-18 December 1999, Delhi, India