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High growth rate epitaxy of 4H-SiC layers with improved crystal quality
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2000 (English)In: Proc. III Intern. Seminar on SiC and Related Materials, 2000, 83-88 p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2000. 83-88 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-63097OAI: oai:DiVA.org:liu-63097DiVA: diva2:376328
Conference
Third International Seminar on SiC and Related Materials, 24-26 May 2000, Novgorod, Russia
Available from: 2010-12-10 Created: 2010-12-10 Last updated: 2015-01-22

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Syväjärvi, MikaelYakimova, RositsaJanzén, Erik

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Syväjärvi, MikaelYakimova, RositsaJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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