Hysteresis-free reactive high power impulse magnetron sputtering
2008 (English)In: Thin Solid Films, ISSN 0040-6090, Vol. 516, no 18, 6398-6401 p.Article in journal (Refereed) Published
High power impulse magnetron sputtering (HIPIMS) of an Al target in Ar/O2 mixtures has been studied. The use of HIPIMS is shown to drastically influence the process characteristics compared to conventional sputtering. Under suitable conditions, oxide formation on the target as the reactive gas flow is increased is suppressed, and the hysteresis effect commonly observed as the gas flow is varied during conventional sputtering can be reduced, or even completely eliminated, using HIPIMS. Consequently, stoichiometric alumina can be deposited under stable process conditions at high rates. Possible explanations for this behavior as well as a model qualitatively describing the process are presented.
Place, publisher, year, edition, pages
2008. Vol. 516, no 18, 6398-6401 p.
Reactive Sputtering, High Power Impulse Magnetron Sputtering, Alumina, Process modeling
IdentifiersURN: urn:nbn:se:liu:diva-15028DOI: 10.1016/j.tsf.2007.08.123OAI: oai:DiVA.org:liu-15028DiVA: diva2:37670
Original publication: E. Wallin and U. Helmersson, Hysteresis-free reactive high power impulse magnetron sputtering, 2008, Thin Solid Films, (516), 18, 6398-6401.http://dx.doi.org/10.1016/j.tsf.2007.08.123. Copyright: Elsevier B.V., http://www.elsevier.com/2008-10-102008-10-102013-10-30Bibliographically approved