Phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
2010 (English)Conference paper (Other academic)
For full exploration of dilute nitrides in device applications, a better understanding and control of defects located at interfaces involving e.g. Ga(In)NP are required. In this work we report on the first identification of a point defect situated at an interface between two semiconductors: GaNP and GaP. The defect is concluded to be a complex involving a P antisite or a P interstitial in its core, partnered with a neighboring impurity/defect aligned along a <111> direction, from detailed angular dependence studies of the optically detected magnetic resonance (ODMR) spectra at both X- and Q-band microwave frequencies. The principal g and A values, g┴=2.013, g║=2.002, A┴=130x10-4 cm-1 and A║=330x10-4 cm-1, are obtained from a spin Hamiltonian analysis. The interface nature of the defect is clearly evident from the absence of the ODMR lines originating from two out of four equivalent <111> orientations. Defect formation is shown to be facilitated by severe nitrogen ion bombardment under non-equilibrium growth conditions during solid-source molecular beam epitaxy and the defect is thermally stable upon post-growth thermal annealing.
Place, publisher, year, edition, pages
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-63254OAI: oai:DiVA.org:liu-63254DiVA: diva2:377249
E-MRS 2010 Spring Meeting, Strasbourg, France, June 7-11, 2010