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Phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
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2010 (English)Conference paper, Published paper (Other academic)
Abstract [en]

For full exploration of dilute nitrides in device applications, a better understanding and control of defects located at interfaces involving e.g. Ga(In)NP are required. In this work we report on the first identification of a point defect situated at an interface between two semiconductors: GaNP and GaP. The defect is concluded to be a complex involving a P antisite or a P interstitial in its core, partnered with a neighboring impurity/defect aligned along a <111> direction, from detailed angular dependence studies of the optically detected magnetic resonance (ODMR) spectra at both X- and Q-band microwave frequencies. The principal g and A values, g=2.013, g=2.002, A=130x10-4 cm-1 and A=330x10-4 cm-1, are obtained from a spin Hamiltonian analysis. The interface nature of the defect is clearly evident from the absence of the ODMR lines originating from two out of four equivalent <111> orientations. Defect formation is shown to be facilitated by severe nitrogen ion bombardment under non-equilibrium growth conditions during solid-source molecular beam epitaxy and the defect is thermally stable upon post-growth thermal annealing.

Place, publisher, year, edition, pages
2010.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-63254OAI: oai:DiVA.org:liu-63254DiVA: diva2:377249
Conference
E-MRS 2010 Spring Meeting, Strasbourg, France, June 7-11, 2010
Available from: 2010-12-13 Created: 2010-12-13 Last updated: 2017-03-27

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Dagnelund, DanielVorona, Igor PVlasenko, Leonid SWang, XingjunBuyanova, Irina AChen, Weimin

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Dagnelund, DanielVorona, Igor PVlasenko, Leonid SWang, XingjunBuyanova, Irina AChen, Weimin
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