Aluminum doping of epitaxial Silicon Carbide
2003 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 253, no 1-4, 340-350 p.Article in journal (Refereed) Published
Intentional doping of aluminum in 4H and 6H SiC has been performed using a hot-wall CVD reactor. The dependence of aluminum incorporation on temperature, pressure, C/Si ratio, growth rate, and TMA flow has been investigated. The aluminum incorporation showed to be polarity dependent. The high aluminum incorporation on the Si-face is closely related to the carbon coverage on the SiC surface. Changes in process parameters changes the effective C/Si ratio close to the SiC surface. Increased growth rate and C/Si ratio increases the aluminum incorporation on the Si-face. Diffusion limited incorporation occurs at high growth rate. Reduced pressure increases the effective C/Si ratio, and at low growth rate, the aluminum incorporation increases initially, levels off at a critical pressure, and continues to decrease below the critical pressure. The aluminum incorporation showed to be constant in a temperature range of 50°C. The highest atomic concentration of aluminum observed in this study was 3×1017 and 8×1018 cm−3 in Si and C-face, respectively.
Place, publisher, year, edition, pages
ScienceDirect , 2003. Vol. 253, no 1-4, 340-350 p.
A1. Doping; A1. Growth models; A3. Chemical vapor deposition processes; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide
National CategoryOther Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-15055DOI: 10.1016/S0022-0248(03)01045-5OAI: oai:DiVA.org:liu-15055DiVA: diva2:37735
The status of the article on the defence day was: Submitted and the original title was "Aluminum doping of Silicon Carbide: Effect of Process Parameters".2008-10-132008-10-132014-10-08Bibliographically approved