Growth and characterisation 4H-SiC MESFET structures grown by Hot-Wall CVD
2001 (English)In: Proc. of the MRS 2000 Fall Meeting, 2001, H2.3.2- p.Conference paper (Refereed)
Metal semiconductor field effect transistor structures have been grown in a hot-wall CVD reactor. Using trimethylaluminium and nitrogen, p- and n-type epitaxial layers were grown on semi insulating substrates. A comprehensive characterization study of thickness and doping of these multi structures has been performed by using scanning electron microscopy , secondary ion mass spectrometry, capacitance-voltage and low temperature photoluminescence. Optimisation of growth parameters has resulted in very abrupt doping profiles. The grown metal semiconductor field effect transistor structures have been processed and parts of the transistor properties are presented.
Place, publisher, year, edition, pages
2001. H2.3.2- p.
Hot-Wall CVD, MESFET, Silicon carbide, SEM, SIMS
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-15062OAI: oai:DiVA.org:liu-15062DiVA: diva2:37744
MRS 2000 Fall Meeting