Determination of nitrogen doping concentration in doped 4H-SiC epilayers by low temperature photoluminescence
2005 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. 72, no 2-3, 254-257 p.Article in journal (Refereed) Published
A complete calibration of nitrogen concentration in doped 4H-SiC material is presented. This is done in the very large range of doping available today, i.e. from low 1014 to 1019 cm-3. The samples are 4H-SiC films fabricated by hot-wall chemical vapour deposition. Low temperature photoluminescence is used as the experimental tool. For doping concentrations less than 8 × 1017 cm-3 comparison between the intensity of various luminescence lines is used, whereas for doping higher than 3 × 1018 cm-3 the energy position of an observed broad band allows the determination of the doping level.
Place, publisher, year, edition, pages
2005. Vol. 72, no 2-3, 254-257 p.
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-15063DOI: 10.1238/Physica.Regular.072a00254OAI: oai:DiVA.org:liu-15063DiVA: diva2:37747
On the day of the defence the status of article IV was: Submitted to Applied Physics Letter.2008-10-132008-10-132014-10-08Bibliographically approved