Growth of high quality AlN Epitaxial Films by Hot-Wall Chemical Vapour Deposition
1998 (English)In: Proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, 1997, 1998, Vol. 264-268, 1133-1136 p.Conference paper (Refereed)
Epitaxial films of high quality AlN have been grown on SiC substrates at 1200 °C and 1450 °C, using a hot-wall CVD reactor. The thickness of the epitaxial layers were measured using room temperature infrared reflectance. To verify the crystal quality, X-ray diffraction (XRD) rocking curves of the ALN 0002 peak were measured. A 250 Å thick film grown at 1450°C had a full width half maximum (FWHM) of 42 arcsec, whereas a 1000 Å thick film grown at 1200 °C had a FWHM of 100 arcsec. A TEM image of the sample grown at the lower temperature showed thickness of around 950 Å, thereby verifying the infrared reflectance measurements. We conclude that the higher temperature the better the crystal quality we obtain.
Place, publisher, year, edition, pages
1998. Vol. 264-268, 1133-1136 p.
Hot-Wall CVD, Thin Film, XRD, TEM, Infrared reflectance
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-15065OAI: oai:DiVA.org:liu-15065DiVA: diva2:37754
International Conference on Silicon Carbide, III-Nitrides and Related Materials, 1997