Infrared Reflectance of Extremely Thin AlN Epi Films Deposited on SiC Substrates
1998 (English)In: Materials Science Forum Vols. 264-268, 1998, Vol. 264-268, 649-652 p.Conference paper (Refereed)
The room temperature reflectance of thin (£ 1000Å) AlN epi-films deposited on n type 6H SiC has been measure. These epi-films are too thin to produce interference fringes, from which epi-films thickness is often extracted, within the measured spectral region. However, features from the AlN reststrahl reflectance band can be clearly seen for AlN epi-films as thin as 250Å. Thicknesses are extracted from the measured spectra by comparing them directly to calculated spectra with the epi-film thickness being the only fitting parameter. The accuracy of these thickness determinations is confirmed by comparing them to thickness measured on samples studied by cross sectional TEM.
Place, publisher, year, edition, pages
1998. Vol. 264-268, 649-652 p.
Epi-film Thickness, Reflectance, TEM
National CategoryOther Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-15066OAI: oai:DiVA.org:liu-15066DiVA: diva2:37757
Conference on Silicon Carbide, III-Nitrides and Related Materials, 1997