Nitrogen doping of epitaxial Silicon Carbide
2002 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 236, no 1-3, 101-112 p.Article in journal (Refereed) Published
Intentional doping with nitrogen of 4H- and 6H-SiC has been performed using a hot-wall CVD reactor. The nitrogen doping dependence on the temperature, pressure, C/Si ratio, growth rate and nitrogen flow has been investigated. The nitrogen incorporation for C-face material showed to be C/Si ratio independent, whereas the doping decreased with increasing C/Si ratio for the Si-face material in accordance with the “site-competition” model. The nitrogen incorporation was constant in a temperature “window” of 75°C on Si-face material indicating a mass transport limited incorporation. Increasing the growth rate resulted in a decrease of nitrogen incorporation on Si-face but an increase on C-face material. Finally, a comparison between previously published results on cold-wall CVD-grown material and the present hot-wall-grown material is presented.
Place, publisher, year, edition, pages
ScienceDirect , 2002. Vol. 236, no 1-3, 101-112 p.
A1. Doping, A3. Hot wall epitaxy, B2. Superconducting materials
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-15068DOI: 10.1016/S0022-0248(01)02198-4OAI: oai:DiVA.org:liu-15068DiVA: diva2:37758
The status of this article on the day of the defence was: Submitted and the title of the article was "Nitrogen doping of Silicon Carbide: Effect of Process Parameters"2008-10-132008-10-132016-08-31Bibliographically approved