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Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
University of Bristol.
QinetiQ Ltd.
QinetiQ Ltd.
QinetiQ Ltd.
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2011 (English)In: SOLID-STATE ELECTRONICS, ISSN 0038-1101, Vol. 55, no 1, 5-7 p.Article in journal (Refereed) Published
Abstract [en]

A time-resolved micro-Raman technique was developed to probe the transient voltage in the GaN buffer layer of AlGaN/GaN heterostructure devices. The transient potential distribution under Ohmic contacts of devices behaved like a capacitance-resistance coupled network, with a decrease in amplitude and phase shift of the potential as a function of operating voltage frequency. This phenomenon was used to extract a value of 0.6 M Omega/square for sheet resistance of the AIN nucleation layer at the GaN/SiC interface from the characteristic RC value of the network. This demonstrates the effectiveness of this voltage probe technique as a non-invasive method of characterizing nucleation layers.

Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam. , 2011. Vol. 55, no 1, 5-7 p.
Keyword [en]
AlGaN/GaN heterostructrure devices, Raman spectroscopy, Device characterization
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-63376DOI: 10.1016/j.sse.2010.09.008ISI: 000284795900002OAI: oai:DiVA.org:liu-63376DiVA: diva2:379614
Available from: 2010-12-18 Created: 2010-12-17 Last updated: 2012-01-09

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Forsberg, UrbanLundskog, AndersKakanakova-Georgieva, AneliaJanzén, Erik

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