Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet
2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, no 20, 201903- p.Article in journal (Refereed) Published
We study the effect of nitrogen on the GaAs0.9-xNxSb0.1 (x = 0.00, 0.65%, 1.06%, 1.45%, and 1.90%) alloy dielectric function by spectroscopic ellipsometry in the energy range from 0.73 to 4.75 eV. The compositional dependences of the critical points energies for the GaAs0.9-xNxSb0.1 are obtained. In addition to the GaAs intrinsic transitions E-1, E-1+ Delta(1), and E-0, the nitrogen-induced Gamma-point optical transitions E-0 and E+, together with a third transition E-#, are identified. We find that with increasing the N content, the E-0 transition shifts to lower energies while the E+ and (E)# transitions shift to higher energies. We suggest that the origin of the E-0, E+, and E-# transitions may be explained by the double band anticrossing (BAC) model, consisting of a conduction BAC model and a valence BAC model.
Place, publisher, year, edition, pages
American Institute of Physics , 2010. Vol. 97, no 20, 201903- p.
IdentifiersURN: urn:nbn:se:liu:diva-63955DOI: 10.1063/1.3518479ISI: 000284545200019OAI: oai:DiVA.org:liu-63955DiVA: diva2:384752
N. Ben Sedrine, C. Bouhafs, J.C. Harmand, R. Chtourou and Vanya Darakchieva, Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet, 2010, Applied Physics Letters, (97), 20, 201903.
Copyright: American Institute of Physics