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Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet
Institute Tecnology and Nucl, Sacavem, Portugal.
Centre Rech and Technology Energie, Lab Photovolt Semicond and Nanostruct, Hammam Lif 2050, Tunisia.
CNRS.
Centre Rech and Technology Energie, Lab Photovolt Semicond and Nanostruct, Hammam Lif 2050, Tunisia.
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2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, no 20, 201903- p.Article in journal (Refereed) Published
Abstract [en]

We study the effect of nitrogen on the GaAs0.9-xNxSb0.1 (x = 0.00, 0.65%, 1.06%, 1.45%, and 1.90%) alloy dielectric function by spectroscopic ellipsometry in the energy range from 0.73 to 4.75 eV. The compositional dependences of the critical points energies for the GaAs0.9-xNxSb0.1 are obtained. In addition to the GaAs intrinsic transitions E-1, E-1+ Delta(1), and E-0, the nitrogen-induced Gamma-point optical transitions E-0 and E+, together with a third transition E-#, are identified. We find that with increasing the N content, the E-0 transition shifts to lower energies while the E+ and (E)# transitions shift to higher energies. We suggest that the origin of the E-0, E+, and E-# transitions may be explained by the double band anticrossing (BAC) model, consisting of a conduction BAC model and a valence BAC model.

Place, publisher, year, edition, pages
American Institute of Physics , 2010. Vol. 97, no 20, 201903- p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-63955DOI: 10.1063/1.3518479ISI: 000284545200019OAI: oai:DiVA.org:liu-63955DiVA: diva2:384752
Note
Original Publication: N. Ben Sedrine, C. Bouhafs, J.C. Harmand, R. Chtourou and Vanya Darakchieva, Effect of nitrogen on the GaAs0.9-xNxSb0.1 dielectric function from the near-infrared to the ultraviolet, 2010, Applied Physics Letters, (97), 20, 201903. http://dx.doi.org/10.1063/1.3518479 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2011-01-10 Created: 2011-01-10 Last updated: 2017-12-11

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