Deep levels in hetero-epitaxial as-grown 3C-SiC
2010 (English)In: AIP Conference Proceedings, Vol. 1292, 2010, 63-66 p.Conference paper (Refereed)
3C-SiC grown hetero-epitaxially on 4H- or 6H-SiC using a standard or a chloride-based CVD process were electrically characterized using IV, CV and DLTS. The reverse leakage current of the Au-Schottky diodes was reduced to lower than 10-8 A at -2V by a thermal oxidation step using UV-light illumination at 200oC. The Schottky barrier height of the Ni and Au contacts were determined by IV measurement to be ØB = 0.575 eV and ØB = 0.593 eV, respectively, for a contact diameter of about 150 mm. One dominant DLTS peak was observed in the 3C-epilayers independently of the substrate at about EC0:60 eV which is attributed to W6-level in 3C-SiC. This deep level is thought to be related to an intrinsic defect.
Place, publisher, year, edition, pages
2010. 63-66 p.
Deep levels, 3C-SiC, hetero-epitaxial, chloride-based CVD
IdentifiersURN: urn:nbn:se:liu:diva-64425DOI: 10.1063/1.3518312ISBN: 978-073540847-0OAI: oai:DiVA.org:liu-64425DiVA: diva2:390803
E-MRS Symposium F on 2010 Wide Bandgap Cubic Semiconductors: From Growth to Devices, 2010