liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Real-time control of AlN incorporation in epitaxial Hf1-xAlxN using high-flux, low-energy (10-40 eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target
University of Illinois.
University of Illinois.
University of Illinois.
University of Illinois.
Show others and affiliations
2011 (English)In: ACTA MATERIALIA, ISSN 1359-6454, Vol. 59, no 2, 421-428 p.Article in journal (Refereed) Published
Abstract [en]

The AlN incorporation probability in single crystal Hf-1 (-) xAlxN(0 0 1) layers is controllably adjusted between similar to 0% and 100% by varying the ion energy (E-i) incident at the growing film over a narrow range, 10-40 eV. The layers are grown on MgO(0 0 1) at 450 degrees C using ultrahigh vacuum magnetically unbalanced reactive magnetron sputtering from a Hf0.7Al0.3 alloy target in a 5%-N-2/Ar atmosphere at a total pressure of 20 mTorr (2.67 Pa). The ion to metal flux ratio incident at the growing film is constant at 8. Epitaxial film compositions vary from x = 0.30 with E-i = 10 eV, to 0.27 with E-i = 20 eV, 0.17 with E-i = 30 eV, and andlt;= 0.002 with E-i andgt;= 40 eV. Thus, the AlN incorporation probability decreases by greater than two orders of magnitude. This extraordinary range in real-time manipulation of film chemistry during deposition is due to the efficient resputtering of deposited Al atoms (27 amu) by Ar+ ions (40 amu) neutralized and backscattered from heavy Hf atoms (178.5 amu) in the film. This provides a new reaction pathway to synthesize, at high deposition rates, compositionally complex heterostructures, multilayers, and superlattices with abrupt interfaces from a single alloy target by controllably switching E-i. For multilayer and superlattice structures, the choice of E-i value determines the layer composition and the switching periods control the individual layer thickness.

Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam. , 2011. Vol. 59, no 2, 421-428 p.
Keyword [en]
Sputter deposition, Ion bombardment, Transition metal nitrides, HfAlN, Nanolayers
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-64586DOI: 10.1016/j.actamat.2010.08.023ISI: 000285486300001OAI: diva2:392790
Available from: 2011-01-28 Created: 2011-01-28 Last updated: 2016-08-31

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Hultman, Lars
By organisation
Thin Film PhysicsThe Institute of Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 36 hits
ReferencesLink to record
Permanent link

Direct link