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A low-energy electron microscopy and x-ray photo-emission electron microscopy study of Li intercalated into graphene on SiC(0001)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Lund University.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2010 (English)In: NEW JOURNAL OF PHYSICS, ISSN 1367-2630, Vol. 12, no 125015Article in journal (Refereed) Published
Abstract [en]

The effects induced by the deposition of Li on 1 and 0 ML graphene grown on SiC(0001) and after subsequent heating were investigated using low-energy electron microscopy (LEEM) and x-ray photo-emission electron microscopy (XPEEM). For 1 ML samples, the collected photoelectron angular distribution patterns showed the presence of single pi-cones at the six equivalent K-points in the Brillouin zone before Li deposition but the presence of two pi-cones (pi-bands) after Li deposition and after heating to a few hundred degrees C. For 0 ML samples, no pi-band could be detected close to the Fermi level before deposition, but distinct pi-cones at the K-points were clearly resolved after Li deposition and after heating. Thus Li intercalation was revealed in both cases, transforming the carbon buffer layer (0 ML) to graphene. On 1 ML samples, but not on 0 ML, a (root 3 x root 3) R30 degrees diffraction pattern was observed immediately after Li deposition. This pattern vanished upon heating and then wrinkles/cracks appeared on the surface. Intercalation of Li was thus found to deteriorate the quality of the graphene layer, especially for 1 ML samples. These wrinkles/cracks did not disappear even after heating at temperatures andgt;= 500 degrees C, when no Li atoms remained on the substrate.

Place, publisher, year, edition, pages
Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft , 2010. Vol. 12, no 125015
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-64573DOI: 10.1088/1367-2630/12/12/125015ISI: 000285585900012OAI: oai:DiVA.org:liu-64573DiVA: diva2:392812
Available from: 2011-01-28 Created: 2011-01-28 Last updated: 2013-05-07

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Virojanadara, ChariyaWatcharinyanon, SomsakulYakimova, RositsaJohansson, Leif I

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