Hole Shake-Up in Individual InGaAs Quantum Dots
(English)Manuscript (preprint) (Other academic)
We report on a spectroscopic study of hole shake-up processes in single InGaAs quantum dots. By studying dots with very high luminescence efficiency these processes are unveiled and further tested in an applied magnetic field. The mechanism is attributed to shake-up of a hole from the S ground state to the D excited state. The experimental results are confirmed by configuration interaction calculations that also reveal a dependence of the shake-up intensity on the relative extension of electron and hole wave functions.
IdentifiersURN: urn:nbn:se:liu:diva-64726OAI: oai:DiVA.org:liu-64726DiVA: diva2:394591