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Transient photoluminescence of shallow donor bound excitons in GaN
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-9840-7364
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2010 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 82, 235202- p.Article in journal (Refereed) Published
Abstract [en]

We present a detailed study of photoluminescence transients for neutral donor bound excitons (DBEs) in GaN, notably the ON donor DBE at 3.4714 eV and the SiGa DBE at 3.4723 eV. The studied samples are thick strain free nominally undoped bulk GaN samples, with a spectroscopic linewidth <0.5 meV at 2 K. The photoluminescence (PL) decay curves for these no-phonon (NP) lines are strongly nonexponential, and do not allow a proper assessment of the characteristic BE decay time. The decay of the LO-phonon replicas as well as the so-called two-electron transitions (TETs) at lower energies show a nicely exponential behavior, and allow extraction of DBE decay times of about 1.1 ns for the Si DBE and 1.8 ns for the O DBE, respectively. The initial nonexponential decay behavior of the NP lines has been studied in both the common front surface excitation-detection mode and with detection in transmission through the sample. This initial decay is explained as related to scattering processes in the near surface region, involving the DBEs and free excitons (FEs). Light scattering processes may also contribute to this complex decay shape. The DBE-LO-phonon decay does not discriminate between the O and Si DBEs because of spectral overlap involving different LO modes. The TET decays at 2 K are very different for transitions related to the DBE ground state and DBE excited states (going to p-like donor final states), for T>10 K thermalization between the DBE ground state and DBE excited states produces a common decay time. Thermalization between free and bound excitons appears to occur above about 20 K, when the DBE decay follows the FE decay. A simple two-level modeling of exciton capture and recombination for the PL decay curves of the FE and the DBEs, as commonly used in the literature, is shown to be generally inadequate. A broad PL background in the TET spectral region is suggested to be related to a radiative Auger process, where the DBEs recombine while leaving the donors ionized.

Place, publisher, year, edition, pages
American Physical Society , 2010. Vol. 82, 235202- p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-65351DOI: 10.1103/PhysRevB.82.235202ISI: 000286766900004OAI: oai:DiVA.org:liu-65351DiVA: diva2:395162
Note
Original Publication: Bo Monemar, Plamen Paskov, Peder Bergman, Galia Pozina, A.A. Toropov, T.V. Shubina, T. Malinauskas and A. Usui, Transient photoluminescence of shallow donor bound excitons in GaN, 2010, Physical Review B Condensed Matter, (82), , 235202. http://dx.doi.org/10.1103/PhysRevB.82.235202 Copyright: American Physical Society http://www.aps.org/Available from: 2011-02-04 Created: 2011-02-04 Last updated: 2017-12-11

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