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6H-type zigzag faults in low-doped 4H-SiC epitaxial layers.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
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2010 (English)In: Mat. Sci. Forum, Vols. 645-648, 2010, 347-350 p.Conference paper, Published paper (Refereed)
Abstract [en]

A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 4H-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.

Place, publisher, year, edition, pages
2010. 347-350 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-65361DOI: 10.4028/www.scientific.net/MSF.645-648.347ISBN: 0878492798 (print)ISBN: 978-087849279-4 OAI: oai:DiVA.org:liu-65361DiVA: diva2:395192
Conference
13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009; Nurnberg; Germany
Available from: 2011-02-04 Created: 2011-02-04 Last updated: 2014-10-08

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Henry, Anne

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