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Kinetic model of SiGe selective epitaxial growth using RPCVD technique
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2010 (English)In: ECS Transactions, ISSN 1938-6737, Vol. 33, no 6, 581-593 p.Article in journal (Refereed) Published
Abstract [en]

Recently, selective epitaxial growth (SEG) of B-doped SiGe layershas been used in recessed source/drain (S/D) of pMOSFETs. Theuniaxial induced strain enhances the carrier mobility in the channel.In this work, a detailed model for SEG of SiGe has been developed topredict the growth rate and Ge content of layers indichlorosilane(DCS)-based epitaxy using a reduced-pressure CVDreactor. The model considers each gas precursor contributions fromthe gas-phase and the surface.The gas flow and temperature distribution were simulated in the CVDreactor and the results were exerted as input parameters for Maxwellenergy distribution. The diffusion of molecules from the gasboundaries was calculated by Fick’s law and Langmuir isothermtheory (in non-equilibrium case) was applied to analyze the surface.The pattern dependency of the selective growth was also modeledthrough an interaction theory between different subdivisions of thechips. Overall, a good agreement between the kinetic model and theexperimental data were obtained.

Place, publisher, year, edition, pages
Electrochemical Society , 2010. Vol. 33, no 6, 581-593 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-65701DOI: 10.1149/1.3487589OAI: oai:DiVA.org:liu-65701DiVA: diva2:398429
Note
Original Publication: M. Kolahdouz, L. Maresca, R. Ghandi, Ali Khatibi and H. Radamson, Kinetic model of SiGe selective epitaxial growth using RPCVD technique, 2010, ECS Transactions, (33), 6, 581-593. http://dx.doi.org/10.1149/1.3487589 Copyright: Electrochemical Society Available from: 2011-02-21 Created: 2011-02-17 Last updated: 2011-02-21Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
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More styles
Language
  • de-DE
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  • Other locale
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