Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers
2009 (English)In: IEEE transactions on nanotechnology, ISSN 1536-125X, E-ISSN 1941-0085, Vol. 8, no 3, 291-297 p.Article in journal (Refereed) Published
The influence of chip layout and architecture on thepattern dependency of selective epitaxy of B-doped SiGe layers hasbeen studied. The variations of Ge-, B-content, and growth ratehave been investigated locally within a wafer and globally fromwafer to wafer. The results are described by the gas depletion theory.Methods to control the variation of layer profile are suggested.
Place, publisher, year, edition, pages
IEEE , 2009. Vol. 8, no 3, 291-297 p.
IdentifiersURN: urn:nbn:se:liu:diva-65702DOI: 10.1109/TNANO.2008.2009219OAI: oai:DiVA.org:liu-65702DiVA: diva2:398433
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Mohammadreza Kolahdouz, Julius Hållstedt, Ali Khatibi, Mikael Östling, Rick Wise, Deborah J. Riley and Henry Radamson, Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers, 2009, IEEE transactions on nanotechnology, (8), 3, 291-297.