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Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers
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2009 (English)In: IEEE transactions on nanotechnology, ISSN 1536-125X, E-ISSN 1941-0085, Vol. 8, no 3, 291-297 p.Article in journal (Refereed) Published
Abstract [en]

The influence of chip layout and architecture on thepattern dependency of selective epitaxy of B-doped SiGe layers hasbeen studied. The variations of Ge-, B-content, and growth ratehave been investigated locally within a wafer and globally fromwafer to wafer. The results are described by the gas depletion theory.Methods to control the variation of layer profile are suggested.

Place, publisher, year, edition, pages
IEEE , 2009. Vol. 8, no 3, 291-297 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-65702DOI: 10.1109/TNANO.2008.2009219OAI: oai:DiVA.org:liu-65702DiVA: diva2:398433
Note
©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. Mohammadreza Kolahdouz, Julius Hållstedt, Ali Khatibi, Mikael Östling, Rick Wise, Deborah J. Riley and Henry Radamson, Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers, 2009, IEEE transactions on nanotechnology, (8), 3, 291-297. http://dx.doi.org/10.1109/TNANO.2008.2009219 Available from: 2011-02-21 Created: 2011-02-17 Last updated: 2017-12-11Bibliographically approved

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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
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  • nn-NB
  • sv-SE
  • Other locale
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Output format
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