Room-temperature spin injection and spin loss across a GaNAs/GaAs interface
2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 1, 012112- p.Article in journal (Refereed) Published
Recently discovered effect of spin-filtering and spin amplification in GaNAs enables us to reliably obtain detailed information on the degree of spin loss during optical spin injection across a semiconductor heterointerface at room temperature. Spin polarization of electrons injected from GaAs into GaNAs is found to be less than half of what is generated in GaNAs by optical orientation. We show that the observed reduced spin injection efficiency is not only due to spin relaxation in GaAs, but more importantly due to spin loss across the interface due to structural inversion asymmetry and probably also interfacial point defects.
Place, publisher, year, edition, pages
American Institute of Physics , 2011. Vol. 98, no 1, 012112- p.
Engineering and Technology Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-65721DOI: 10.1063/1.3535615ISI: 000286009800041OAI: oai:DiVA.org:liu-65721DiVA: diva2:398522
Original Publication: Yuttapoom Puttisong, Xiangjun Wang, Irina Buyanova, C W Tu, L Geelhaar, H Riechert and Weimin Chen, Room-temperature spin injection and spin loss across a GaNAs/GaAs interface, 2011, APPLIED PHYSICS LETTERS, (98), 1, 012112. http://dx.doi.org/10.1063/1.3535615 Copyright: American Institute of Physics http://www.aip.org/2011-02-182011-02-182015-05-28