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Epitaxial Growth of GaN (0001)/Al2O3 (0001) by Reactive High Power Impulse Magnetron Sputter Deposition
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-3203-7935
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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(English)Manuscript (preprint) (Other academic)
Abstract [en]

Epitaxial GaN (0001) thin films were grown on Al2O3 (0001) substrates by reactive high power impulse magnetron sputtering of liquid Ga targets in a mixed N2/Ar discharge. A combination of x-ray diffraction, electron microscopy, atomic force microscopy, μ-Raman mapping and spectroscopy, μ-photoluminescence, time of flight elastic recoil detection, and cathodoluminescence showed the formation of relaxed and strained domains in the same films. While the strained domains form due to ion bombardment during growth, the relaxed domains exhibit

Keyword [en]
GaN, Sputtering, HiPIMS, RAMAN, PL, XRD
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-65727OAI: oai:DiVA.org:liu-65727DiVA: diva2:398538
Available from: 2011-02-18 Created: 2011-02-18 Last updated: 2016-08-31Bibliographically approved
In thesis
1. Magnetron Sputter Epitaxy of GaN
Open this publication in new window or tab >>Magnetron Sputter Epitaxy of GaN
2011 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow fullwidth at half maximum (FWHM) of 1054 arcsec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSEgrown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer. GaN (0001) thin films were grown on Al2O3 substrates by reactive high power impulse magnetron sputtering of liquid Ga targets in a mixed N2/Ar discharge. A combination of x-ray diffraction, electron microscopy, atomic force microscopy, μ-Raman microscopy, photoluminescence, time of flight elastic recoil detection, and cathodoluminescence showed the formation of both relaxed and strained domains in the same films. . While the strained domains form due to ion bombardment during growth. The relaxed domains exhibit superior structural and optical properties comparative to the strained domains, including room temperature luminescence.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2011. 35 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1470
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-65729 (URN)978-91-7393-226-4 (ISBN)
Presentation
2011-03-03, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2011-02-18 Created: 2011-02-18 Last updated: 2016-08-31Bibliographically approved

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Junaid, MuhammadLundin, DanielPalisaitis, JustinasHsiao, Ching-LienJensen, JensPersson, PerSandström, PerHelmersson, UlfHultman, LarsBirch, Jens

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Junaid, MuhammadLundin, DanielPalisaitis, JustinasHsiao, Ching-LienJensen, JensPersson, PerSandström, PerHelmersson, UlfHultman, LarsBirch, Jens
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Department of Physics, Chemistry and BiologyThe Institute of TechnologyThin Film PhysicsPlasma and Coating Physics
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