Growth of GaN nanotubes by halide vapor phase epitaxy
2011 (English)In: NANOTECHNOLOGY, ISSN 0957-4484, Vol. 22, no 8, 085602- p.Article in journal (Refereed) Published
We have investigated low temperature growth of GaN nanostructures using halide vapor phase epitaxy on c-oriented Al2O3 and Au coated Al2O3 substrates. Depending on the III/V ratio and the growth temperature, the shape and density of the structures could be controlled. By increasing the GaCl partial pressure, the structure changed from dot-like to nanotubes. The nanotubes, which could be open or closed, were about 1 mu m long with a diameter of typically 200 nm. In addition, it was observed that the nanostructures were spontaneously nucleated at droplets of Ga or, when using Au coated Al2O3, on droplets of Au/Ga alloy. By varying the growth temperature, the inner diameter of the nanotubes could be controlled. The experimental results suggest that this approach with pre-patterned Au coated Al(2)O(3)substrates has the potential for fabrication of well-organized nanotubes with a high density.
Place, publisher, year, edition, pages
Institute of Physics; 1999 , 2011. Vol. 22, no 8, 085602- p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-66282DOI: 10.1088/0957-4484/22/8/085602ISI: 000286317500011OAI: oai:DiVA.org:liu-66282DiVA: diva2:403181
Carl Hemmingsson, Galia Pozina, Sergey Khromov and Bo Monemar, Growth of GaN nanotubes by halide vapor phase epitaxy, 2011, NANOTECHNOLOGY, (22), 8, 085602.
Copyright: Institute of Physics; 1999