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Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
University of California Berkeley.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Copenhagen.
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2011 (English)In: ADVANCED MATERIALS, ISSN 0935-9648, Vol. 23, no 7, 878-+ p.Article in journal (Refereed) Published
Abstract [en]

A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.

Place, publisher, year, edition, pages
John Wiley and Sons, Ltd , 2011. Vol. 23, no 7, 878-+ p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-66902DOI: 10.1002/adma.201003993ISI: 000287668500011OAI: diva2:405240
Available from: 2011-03-21 Created: 2011-03-21 Last updated: 2011-03-21

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Yakimova, Rositsa
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