Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates
2011 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 40, no 4, 394-399 p.Article in journal (Refereed) Published
Time-resolved nonlinear optical techniques were applied to determine the electronic parameters of cubic silicon carbide layers. Carrier lifetime, tau, and mobility, mu, were measured in a free-standing wafer grown on undulant Si and an epitaxial layer grown by hot-wall chemical vapor deposition (CVD) on a nominally on-axis 4H-SiC substrate. Nonequilibrium carrier dynamics was monitored in the 80 K to 800 K range by using a picosecond free carrier grating and free carrier absorption techniques. Correlation of tau(T) and mu (a)(T) dependencies was explained by the strong contribution of diffusion-limited recombination on extended defects in the layers. A lower defect density in the epitaxial layer on 4H-SiC was confirmed by a carrier lifetime of 100 ns, being similar to 4 times longer than that in free-standing 3C.
Place, publisher, year, edition, pages
Springer Science+Business Media B.V., 2011. Vol. 40, no 4, 394-399 p.
Cubic silicon carbide, time-resolved optical techniques, free carrier absorption, light-induced diffraction grating, carrier lifetime, carrier diffusion and mobility
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-66874DOI: 10.1007/s11664-010-1378-yISI: 000287759100007OAI: oai:DiVA.org:liu-66874DiVA: diva2:405303