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Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates
Institute of Applied Research, Vilnius University, Vilnius, Lithuania.
Institute of Applied Research, Vilnius University, Vilnius, Lithuania.
Institute of Applied Research, Vilnius University, Vilnius, Lithuania.
Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Japan.
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2011 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 40, no 4, 394-399 p.Article in journal (Refereed) Published
Abstract [en]

Time-resolved nonlinear optical techniques were applied to determine the electronic parameters of cubic silicon carbide layers. Carrier lifetime, tau, and mobility, mu, were measured in a free-standing wafer grown on undulant Si and an epitaxial layer grown by hot-wall chemical vapor deposition (CVD) on a nominally on-axis 4H-SiC substrate. Nonequilibrium carrier dynamics was monitored in the 80 K to 800 K range by using a picosecond free carrier grating and free carrier absorption techniques. Correlation of tau(T) and mu (a)(T) dependencies was explained by the strong contribution of diffusion-limited recombination on extended defects in the layers. A lower defect density in the epitaxial layer on 4H-SiC was confirmed by a carrier lifetime of 100 ns, being similar to 4 times longer than that in free-standing 3C.

Place, publisher, year, edition, pages
Springer Science+Business Media B.V., 2011. Vol. 40, no 4, 394-399 p.
Keyword [en]
Cubic silicon carbide, time-resolved optical techniques, free carrier absorption, light-induced diffraction grating, carrier lifetime, carrier diffusion and mobility
National Category
Condensed Matter Physics
URN: urn:nbn:se:liu:diva-66874DOI: 10.1007/s11664-010-1378-yISI: 000287759100007OAI: diva2:405303
Available from: 2011-03-22 Created: 2011-03-21 Last updated: 2016-06-02Bibliographically approved

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Hassan, JawadHenry, AnneBergman, J Peder
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